STW14NM65N

Obsolete

STMicroelectronics

MOSFET N-CH 650V 12A TO247-3

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Obsolete

STMicroelectronics

MOSFET N-CH 650V 12A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW14NM65N

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	FET Type	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STW14NM65N	12 A	25 V	150 °C	650 V	TO-247-3	Through Hole	45 nC	380 mOhm	125 W	MOSFET (Metal Oxide)	N-Channel	TO-247-3	4 V	10 V	1300 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 12A (Tc) 125W (Tc) Through Hole TO-247-3

Technical documentation and resources