IXTC75N10

Obsolete

IXYS

MOSFET N-CH 100V 72A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 100V 72A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXTC75N10

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
IXYS IXTC75N10	72 A	ISOPLUS220™	4500 pF	4 V	20 V	ISOPLUS220™	Through Hole	10 V	MOSFET (Metal Oxide)	260 nC	230 W	20 mOhm	N-Channel	-55 °C	150 °C	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 72A (Tc) 230W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources