TK210V65Z,LQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 15A 5DFN

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 15A 5DFN

Technical Specifications

Parameters and characteristics for this part

Specification	TK210V65Z,LQ

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1370 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	4-VSFN Exposed Pad
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	4-DFN-EP (8x8)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature	Technology	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Toshiba Semiconductor and Storage TK210V65Z,LQ	150 °C	MOSFET (Metal Oxide)	N-Channel	4 V	Surface Mount	30 V	25 nC	4-VSFN Exposed Pad	10 V	1370 pF	4-DFN-EP (8x8)	650 V	15 A	210 mOhm	130 W

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General part information

N-Channel 650 V 15A (Ta) 130W (Tc) Surface Mount 4-DFN-EP (8x8)

Technical documentation and resources