Specification	AUIRFS6535TRL

Current - Continuous Drain (Id) (Tc)	19 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	57 nC, 57 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2340 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	210 W
Qualification	AEC-Q101
Rds On (Max)	185 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	5 V

AUIRFS6535 Series

Part	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Vgs(th) (Max)	Mounting Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Gate Charge (Max)	Grade	Package Name	Technology
INFINEON AUIRFS6535	20 V	-55 °C	175 °C	N-Channel	5 V	Surface Mount	185 mOhm	300 V	10 V	AEC-Q101	2340 pF	210 W	19 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	57 nC 57 nC	Automotive	PG-TO263-3	MOSFET (Metal Oxide)
INFINEON AUIRFS6535TRL	20 V	-55 °C	175 °C	N-Channel	5 V	Surface Mount	185 mOhm	300 V	10 V	AEC-Q101	2340 pF	210 W	19 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	57 nC 57 nC	Automotive	PG-TO263-3	MOSFET (Metal Oxide)

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