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RBEF04006R800JGB00

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Vishay General Semiconductor - Diodes Division

RES CHAS MNT 6.8 OHM 5% 400W

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RBEF04006R800JGB00

Active
Vishay General Semiconductor - Diodes Division

RES CHAS MNT 6.8 OHM 5% 400W

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRBEF04006R800JGB00
Coating, Housing TypeVitreous Enamel Coated
CompositionWirewound
FeaturesPulse Withstanding
Lead StyleSolder Lugs
Mounting FeatureBrackets (not included)
Operating Temperature [Max]415 °C
Operating Temperature [Min]-55 °C
Package / CaseRadial, Tubular
Resistance6.8 Ohms
Size / Dimension [diameter]41.28 mm
Size / Dimension [diameter]1.625 in
Size / Dimension [x]215.9 mm
Size / Dimension [x]8.5 in
Tolerance5 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 387.84

Description

General part information

RBEF0400 Series

6.8 Ohms ±5% 400W Wirewound Chassis Mount Resistor

Documents

Technical documentation and resources