Specification	SSM6K819R,LXHF

Current - Continuous Drain (Id) (Ta)	10 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	8.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1110 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	Flat Leads, 6-SMD
Package Name	6-TSOP-F
Power Dissipation (Max)	1.5 W
Qualification	AEC-Q101
Rds On (Max)	25.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SSM6K819R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 100 V, 10 A, 0.0258 Ω@10V, TSOP6F

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Mounting Type	FET Type	Qualification	Current - Continuous Drain (Id) (Ta)	Operating Temperature	Gate Charge (Max)	Grade	Package Name	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package / Case	Vgs (Max)
Toshiba Semiconductor and Storage SSM6K819R,LXHF	100 V	1.5 W	MOSFET (Metal Oxide)	Surface Mount	N-Channel	AEC-Q101	10 A	175 °C	8.5 nC	Automotive	6-TSOP-F	2.5 V	10 V	4.5 V	1110 pF	25.8 mOhm	6-SMD Flat Leads	20 V

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