Specification	SIHP23N60E-GE3

Current - Continuous Drain (Id) (Tc)	23 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	95 nC
Input Capacitance (Ciss) (Max)	2418 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	227 W
Rds On (Max)	158 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHP23 Series

Part	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max)	Package Name	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Rds On (Max)	Gate Charge (Max)
Vishay Dale SIHP23N60E-GE3	MOSFET (Metal Oxide)	-55 °C	150 °C	23 A	Through Hole	TO-220-3	2418 pF	TO-220AB	227 W	30 V	600 V	N-Channel	10 V	4 V	158 mOhm	95 nC

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