Description
General part information
ISZ034N Series
TheOptiMOS™ 5 60V power MOSFETISZ034N06LM5 comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification inswitched mode power supplies(SMPS), fortelecombricks andserver applications, as well asportable chargers. The small footprint of only 3.3x3.3mm combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISZ034N06LM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 19 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 53 nC |
| Input Capacitance (Ciss) (Max) | 3500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSDSON-8-26 |
| Power Dissipation (Max) | 2.5 W, 83 W |
| Rds On (Max) | 3.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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CAD
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Documents
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