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JAN2N3792

JAN2N3792

Active
Microchip Technology

PNP SILICON HIGH-POWER -60V TO -80V, -10A

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JAN2N3792

JAN2N3792

Active
Microchip Technology

PNP SILICON HIGH-POWER -60V TO -80V, -10A

Find alt

Description

General part information

JAN2N3792-Transistor Series

This specification covers the performance requirements for power PNP silicon 2N3791 and 2N3792 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/379.

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N3792
Current - Collector (Ic) (Max)10 A
Current - Collector Cutoff (Max)5 mA
DC Current Gain (hFE) (Min)30
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-3
Package NameTO-3 (TO-204AA)
Power - Max5 VA
Qualification379, MIL-PRF-19500
Transistor TypePNP
Vce Saturation (Max)2.5 V
Voltage - Collector Emitter Breakdown (Max)80 V

Pricing

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