Specification	SIS407ADN-T1-GE3

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	168 nC
Input Capacitance (Ciss) (Max)	5875 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	39.1 W, 3.7 W
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SIS407 Series

Part	Gate Charge (Max)	Package Name	Input Capacitance (Ciss) (Max)	Package / Case	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Vgs (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Drain to Source Voltage (Vdss)	Mounting Type
Vishay Dale SIS407DN-T1-GE3	93.8 nC	PowerPAK® 1212-8	2760 pF	PowerPAK® 1212-8	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	8 V	P-Channel	25 A 25 A	3.6 W 33 W	4.5 V	1.8 V	9.5 mOhm	20 V	Surface Mount
Vishay Dale SIS407ADN-T1-GE3	168 nC	PowerPAK® 1212-8	5875 pF	PowerPAK® 1212-8	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	8 V	P-Channel	18 A	3.7 W 39.1 W	4.5 V	1.8 V	9 mOhm	20 V	Surface Mount

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