DXT696BK-13

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 0.5A I(C), 180V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-252, PLASTIC/EPOXY, 2 PIN, DPAK-3/2

Search across all available documentation for this part.

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 0.5A I(C), 180V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-252, PLASTIC/EPOXY, 2 PIN, DPAK-3/2

Technical Specifications

Parameters and characteristics for this part

Specification	DXT696BK-13

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	70 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	3.9 W
Supplier Device Package	TO-252-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	180 V

NPN, 180V, 0.5A, TO252

Part	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DXT696BK-13	100 nA	DPAK (2 Leads + Tab) SC-63 TO-252-3	150	NPN	500 mA	TO-252-3	3.9 W	180 V	250 mV	Surface Mount	70 MHz	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly