Specification	SQ4435EY-T1_GE3

Current - Continuous Drain (Id) (Tc)	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	58 nC, 58 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2170 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	6.8 W
Qualification	AEC-Q101
Rds On (Max)	18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQ4435 Series

Part	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Grade	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Mounting Type	Package Length	Package Name	Package Width	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Rds On (Max)	Vgs(th) (Max)	Qualification
Vishay Dale SQ4435EY-T1_BE3	58 nC 58 nC	15 A	Automotive	30 V	-55 °C	175 °C	P-Channel	MOSFET (Metal Oxide)	Surface Mount	0.154 in	8-SOIC	3.9 mm	10 V	4.5 V	20 V	2170 pF	6.8 W	18 mOhm	2.5 V	AEC-Q101
Vishay Dale SQ4435EY-T1_GE3	58 nC 58 nC	15 A	Automotive	30 V	-55 °C	175 °C	P-Channel	MOSFET (Metal Oxide)	Surface Mount	0.154 in	8-SOIC	3.9 mm	10 V	4.5 V	20 V	2170 pF	6.8 W	18 mOhm	2.5 V	AEC-Q101

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