TK32A12N1,S4X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 120 V, 0.0138 Ω@10V, TO-220SIS, U-MOSⅧ-H
TK32A12N1,S4X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 120 V, 0.0138 Ω@10V, TO-220SIS, U-MOSⅧ-H
Description
General part information
TK32A12N1 Series
12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0138 Ω@10V, TO-220SIS, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TK32A12N1,S4X |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 32 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 34 nC |
| Input Capacitance (Ciss) (Max) | 2000 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 30 W |
| Rds On (Max) | 13.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TK32A12N1,S4X | Datasheet
Selection Guide MOSFETs 2025 Rev1.0
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
TK32A12N1 Data sheet/Japanese
MOSFET Self-Turn-On Phenomenon
Derating of the MOSFET Safe Operating Area
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Resonant Circuits and Soft Switching
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
MOSFET SPICE model grade
Simplified CFD Model Application Note
MOSFET Secondary Breakdown
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Electrical Characteristics: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Maximum Ratings: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Avalanche energy calculation