Specification	IPD06P004NATMA1

Current - Continuous Drain (Id) (Tc)	16.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	27 nC
Input Capacitance (Ciss) (Max)	1100 pF, 1100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	63 W
Rds On (Max)	90 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPD06P Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Power Dissipation (Max)	FET Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) (Tc)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
INFINEON IPD06P005NATMA1	10 V	MOSFET (Metal Oxide)	20 V	28 W	P-Channel	10.6 nC 10.6 nC	-55 °C	175 °C	250 mOhm	Surface Mount	420 pF	4 V	60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	6.5 A	PG-TO252-3
INFINEON IPD06P005LSAUMA1		MOSFET (Metal Oxide)	20 V	28 W	P-Channel	13.8 nC	-55 °C	175 °C	250 mOhm	Surface Mount	420 pF	2 V	60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	6.5 A	PG-TO252-3-313	10 V	4.5 V
INFINEON IPD06P004NATMA1	10 V	MOSFET (Metal Oxide)	20 V	63 W	P-Channel	27 nC	-55 °C	175 °C	90 mOhm	Surface Mount	1100 pF 1100 pF	4 V	60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	16.4 A	PG-TO252-3
INFINEON IPD06P004NSAUMA1	10 V	MOSFET (Metal Oxide)	20 V	63 W	P-Channel	27 nC	-55 °C	175 °C	90 mOhm	Surface Mount	1100 pF 1100 pF	4 V	60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	16.4 A	PG-TO252-3-313
INFINEON IPD06P003NATMA1	10 V	MOSFET (Metal Oxide)	20 V	83 W	P-Channel	39 nC	-55 °C	175 °C	65 mOhm	Surface Mount	1600 pF	4 V	60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	22 A	PG-TO252-3

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