IPD65R225C7ATMA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; DPAK TO-252 PACKAGE; 225 MOHM; HIGHEST PERFORMANCE

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DocumentsDatasheet Application Note EN

IPD65R225C7ATMA1

Active

Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; DPAK TO-252 PACKAGE; 225 MOHM; HIGHEST PERFORMANCE

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DocumentsDatasheet Application Note EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD65R225C7ATMA1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	996 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	225 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPD65R225 Series

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs
Infineon Technologies IPD65R225C7ATMA1	11 A	996 pF	N-Channel	10 V	63 W	4 V	Surface Mount	PG-TO252-3	-55 °C	150 °C	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	MOSFET (Metal Oxide)	20 nC	225 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.00
		10	$ 1.95
		100	$ 1.35
		500	$ 1.09
		1000	$ 1.01
	Digi-Reel®	1	$ 3.00
		10	$ 1.95
		100	$ 1.35
		500	$ 1.09
		1000	$ 1.01
	Tape & Reel (TR)	2500	$ 0.95
Newark	Each	1	$ 2.71
		10	$ 1.94
		100	$ 1.39
		500	$ 1.13
		1000	$ 1.05
		2500	$ 0.98

Description

General part information

IPD65R225 Series

The IPD65R225C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.