Specification	GD10MPS17H

Capacitance	721 pF
Current - Average Rectified (Io)	26 A
Current - Reverse Leakage	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-247-2
Package Name	TO-247-2
Reverse Recovery Time (trr)	0 ns
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1700 V
Voltage - Forward (Vf) (Max)	1.8 V

SiC Schottky MPS Series

Part	Package Name	Voltage - Forward (Vf) (Max)	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Reverse Leakage	Technology	Reverse Recovery Time (trr)	Mounting Type	Capacitance	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Diode Count	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Package Leads	Voltage - Peak Reverse (Max)	Diode Pair Count	Diode Pair Configuration	Diode Type	Current - Max
GeneSiC Semiconductor GC10MPS12-220	TO-220-2	1.8 V	54 A	TO-220-2	1200 V	175 °C	-55 °C	10 µA	SiC (Silicon Carbide) Schottky	0 ns	Through Hole	660 pF
GeneSiC Semiconductor GD2X100MPS12N	SOT-227	1.8 V		miniBLOC SOT-227-4	1200 V	175 °C	-55 °C	25 µA	SiC (Silicon Carbide) Schottky	0 ns	Chassis Mount		500 mA	No Recovery Time	500 mA 500 mA	2	Independent	136 A
GeneSiC Semiconductor GD10MPS17H	TO-247-2	1.8 V	26 A	TO-247-2	1700 V	175 °C	-55 °C	20 µA	SiC (Silicon Carbide) Schottky	0 ns	Through Hole	721 pF
GeneSiC Semiconductor GE08MPS06Q-TR
GeneSiC Semiconductor GD2X100MPS12N	SOT-227	1.8 V		miniBLOC SOT-227-4	1200 V	175 °C	-55 °C	25 µA	SiC (Silicon Carbide) Schottky	0 ns	Chassis Mount		500 mA	No Recovery Time	500 mA 500 mA	2	Independent	136 A
GeneSiC Semiconductor GD30MPS12J	D2PAK TO-263-7	1.8 V	59 A		1200 V	175 °C	-55 °C	20 µA	SiC (Silicon Carbide) Schottky	0 ns	Surface Mount	1101 pF	500 mA	No Recovery Time	500 mA 500 mA				7 Leads
GeneSiC Semiconductor GE2X12MPS06D	TO-247-3			TO-247-3																650 V	1	Common Cathode	Schottky	24 A
GeneSiC Semiconductor GE08MPS06Q-TR
GeneSiC Semiconductor GD2X75MPS17N	SOT-227			miniBLOC SOT-227-4	1700 V	175 °C	-55 °C		SiC (Silicon Carbide) Schottky		Chassis Mount		500 mA	No Recovery Time	500 mA 500 mA	2	Independent	115 A
GeneSiC Semiconductor GD10MPS12E	TO-252-2	1.8 V	29 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	1200 V	175 °C	-55 °C	5 µA	SiC (Silicon Carbide) Schottky	0 ns	Surface Mount	367 pF

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GD10MPS17H | Datasheet