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BSP125H6433XTMA1

BSP125H6433XTMA1

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INFINEON

SMALL SIGNAL N+N DUAL POWER MOSFET 60 V ; SO-8 DUAL PACKAGE; 150 MOHM;

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BSP125H6433XTMA1

BSP125H6433XTMA1

Active
INFINEON

SMALL SIGNAL N+N DUAL POWER MOSFET 60 V ; SO-8 DUAL PACKAGE; 150 MOHM;

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Description

General part information

BSP125 Series

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSP125H6433XTMA1
Current - Continuous Drain (Id) (Ta)120 mA
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)6.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)150 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NamePG-SOT223-4
Power Dissipation (Max)1.8 W
QualificationAEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.3 V

Pricing

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CAD

3D models and CAD resources for this part