Specification	SSM6K217FE,LF

Current - Continuous Drain (Id) (Ta)	1.8 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Max)	1.1 nC
Input Capacitance (Ciss) (Max)	130 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Package Name	ES6
Power Dissipation (Max)	500 mW
Rds On (Max)	195 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.2 V

SSM6K217FE Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 40 V, 1.8 A, 0.208 Ω@4.5V, SOT-563(ES6)

Part	Mounting Type	Gate Charge (Max)	Rds On (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature	Drain to Source Voltage (Vdss)	Package Name	Package / Case	FET Type	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Vgs (Max)	Technology
Toshiba Semiconductor and Storage SSM6K217FE,LF	Surface Mount	1.1 nC	195 mOhm	500 mW	8 V	1.8 V	150 °C	40 V	ES6	SOT-563 SOT-666	N-Channel	1.8 A	130 pF	1.2 V	12 V	MOSFET (Metal Oxide)

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