Specification	SQJ912AEP-T2_BE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Max)	38 nC, 38 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1835 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Package Name	PowerPAK® SO-8 Dual
Power - Max (Tc)	48 W
Qualification	AEC-Q101
Rds On (Max)	9.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

SQJ912 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Power - Max (Tc)	Mounting Type	Rds On (Max)	Technology	Qualification	Channel Count	Configuration	Configuration - Features	Grade	Gate Charge (Max)	Package / Case	Vgs(th) (Max)	Package Name	Drain to Source Voltage (Vdss)
Vishay Dale SQJ912AEP-T2_BE3	-55 °C	175 °C	30 A	1835 pF	48 W	Surface Mount	9.3 mOhm	MOSFET (Metal Oxide)	AEC-Q101	2	N-Channel	Dual	Automotive	38 nC 38 nC	PowerPAK® SO-8 Dual	2.5 V	PowerPAK® SO-8 Dual	40 V
Vishay Dale SQJ912DEP-T1_GE3	-55 °C	175 °C	30 A		27 W	Surface Mount	7.3 mOhm	MOSFET (Metal Oxide)	AEC-Q101	2	N-Channel	Dual	Automotive	36 nC	PowerPAK® SO-8 Dual	2.5 V	PowerPAK® SO-8 Dual	40 V
Vishay Dale SQJ912AEP-T2_GE3	-55 °C	175 °C	30 A	1835 pF	48 W	Surface Mount	9.3 mOhm	MOSFET (Metal Oxide)	AEC-Q101	2	N-Channel	Dual	Automotive	38 nC 38 nC	PowerPAK® SO-8 Dual	2.5 V	PowerPAK® SO-8 Dual	40 V

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