1N649 BK

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 600V 400MA DO7

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 600V 400MA DO7

Technical Specifications

Parameters and characteristics for this part

Specification	1N649 BK

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	400 mA
Current - Reverse Leakage @ Vr	200 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-204AA, DO-7
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-7
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

DIODE GEN PURP 600V 400MA DO7

Part	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Speed	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
Central Semiconductor Corp 1N649 BK	Axial, DO-204AA, DO-7	DO-7	200 nA	Standard Recovery >500ns	200 mA	5 pF	175 ░C	-65 C	Through Hole	400 mA	Standard	600 V	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 400mA Through Hole DO-7

Technical documentation and resources

No documents available