Specification	SSM3K16CT,L3F

Current - Continuous Drain (Id) (Ta)	100 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max)	9.3 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-101, SOT-883
Package Name	CST3
Power Dissipation (Max)	100 mW
Rds On (Max)	3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	1.1 V

SSM3K16CT Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.1 A, 3.0 Ω@4V, SOT-883(CST3)

Part	Package Name	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	FET Type	Rds On (Max)	Package / Case	Operating Temperature	Input Capacitance (Ciss) (Max)	Vgs (Max)
Toshiba Semiconductor and Storage SSM3K16CT,L3F	CST3	100 mA	1.1 V	Surface Mount	MOSFET (Metal Oxide)	20 V	1.5 V	4 V	100 mW	N-Channel	3 Ohm	SC-101 SOT-883	150 °C	9.3 pF	10 V

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