Specification	MCG50N03-TP

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	28 nC
Input Capacitance (Ciss) (Max)	2150 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-VDFN Exposed Pad
Package Name	DFN3333
Power Dissipation (Max)	30 W
Rds On (Max)	6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

MCG50N03 Series

Part	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Rds On (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package Name	Package / Case	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	FET Type
MCC (Micro Commercial Components) MCG50N03-TP	28 nC	-55 °C	175 °C	Surface Mount	30 V	10 V	4.5 V	MOSFET (Metal Oxide)	6 mOhm	20 V	50 A	2.5 V	DFN3333	8-VDFN Exposed Pad	2150 pF	30 W	N-Channel
MCC (Micro Commercial Components) MCG50N03-TP	28 nC	-55 °C	175 °C	Surface Mount	30 V	10 V	4.5 V	MOSFET (Metal Oxide)	6 mOhm	20 V	50 A	2.5 V	DFN3333	8-VDFN Exposed Pad	2150 pF	30 W	N-Channel

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