Specification	APTMC60TL11CT3AG

Channel Count	4
Configuration	N-Channel
Configuration - Features	Three Level Inverter
Current - Continuous Drain (Id) (Tc)	28 A
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Max)	49 nC
Input Capacitance (Ciss) (Max)	950 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	SP3
Package Name	SP3
Power - Max	125 W
Rds On (Max)	98 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	2.2 V

APTMC60 Series

Part	Power - Max	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Package / Case	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Current - Continuous Drain (Id) (Tc)	Mounting Type	Configuration - Features	Configuration	Channel Count	Package Name	Gate Charge (Max)
Microchip Technology APTMC60TL11CT3AG	125 W	2.2 V	1200 V	950 pF	SP3	98 mOhm	-40 °C	150 °C	Silicon Carbide (SiC)	28 A	Chassis Mount	Three Level Inverter	N-Channel	4	SP3	49 nC
Microchip Technology APTMC60TLM55CT3AG	250 VA	2.2 V	1200 V	1900 pF	SP3	49 mOhm	-40 °C	150 °C	Silicon Carbide (SiC)	48 A	Chassis Mount	Three Level Inverter	N-Channel	4	SP3	98 nC
Microchip Technology APTMC60TLM14CAG	925 W	2.4 V	1200 V	8400 pF	SP6	12 mOhm	-40 °C	150 °C	Silicon Carbide (SiC)	219 A	Chassis Mount	Three Level Inverter	N-Channel	4	SP6	483 nC

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