Specification	SIZ250DT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	14 A
Current - Continuous Drain (Id) (Tc)	38 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	21 nC
Input Capacitance (Ciss) (Max)	840 pF, 790 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	3.3 mm
Package Name	8-PowerPair®
Package Width	3.3 mm
Power - Max (Ta)	4.3 W
Power - Max (Tc)	33 W
Rds On (Max)	12.2 mOhm, 12.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.4 V

SIZ250 Series

Part	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Technology	Drain to Source Voltage (Vdss)	Power - Max (Ta)	Power - Max (Tc)	Rds On (Max)	Vgs(th) (Max)	Package Name	Package Length	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Channel Count	Configuration	Configuration - Features	Mounting Type	Gate Charge (Max)
Vishay Dale SIZ250DT-T1-GE3	790 pF 840 pF	38 A	14 A	MOSFET (Metal Oxide)	60 V	4.3 W	33 W	12.2 mOhm 12.7 mOhm	2.4 V	8-PowerPair®	3.3 mm	3.3 mm	-55 °C	150 °C	8-PowerWDFN	2	N-Channel	Dual	Surface Mount	21 nC

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