PSMN7R0-60YS,115

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Nexperia USA Inc.

N-CHANNEL LFPAK 60 V, 6.4 MΩ STANDARD LEVEL MOSFET

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PSMN7R0-60YS,115

Active

Nexperia USA Inc.

N-CHANNEL LFPAK 60 V, 6.4 MΩ STANDARD LEVEL MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN7R0-60YS Series

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN7R0-60YS,115

Current - Continuous Drain (Id) (Tc)	89 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	45 nC
Input Capacitance (Ciss) (Max)	2712 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	117 W
Rds On (Max)	6.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

PSMN7R0-60YS Series

N-channel LFPAK 60 V, 6.4 mΩ standard level MOSFET

Part	Package / Case	Package Name	Mounting Type	FET Type	Vgs(th) (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)
Nexperia USA Inc. PSMN7R0-60YS,115	SC-100 SOT-669	LFPAK56 Power-SO8	Surface Mount	N-Channel	4 V	117 W	2712 pF	-55 °C	175 °C	MOSFET (Metal Oxide)	60 V	10 V	20 V	45 nC	89 A	6.4 mOhm