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IPS04N03LA G

IPS04N03LA G

Obsolete
INFINEON

MOSFET N-CH 25V 50A TO251-3

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IPS04N03LA G

IPS04N03LA G

Obsolete
INFINEON

MOSFET N-CH 25V 50A TO251-3

Find alt

Description

General part information

IPS04N Series

N-Channel 25 V 50A (Tc) 115W (Tc) Through Hole PG-TO251-3-11

Technical Specifications

Parameters and characteristics for this part

SpecificationIPS04N03LA G
Current - Continuous Drain (Id) (Tc)50 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)41 nC
Input Capacitance (Ciss) (Max)5199 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-251-3 Stub Leads, IPAK
Package NamePG-TO251-3-11
Power Dissipation (Max)115 W
Rds On (Max)4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

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Documents

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