IRS2301SPBF

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8SOIC

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2301SPBF

Channel Type	Independent
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	130 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	5 V

Part	Driven Configuration	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Channel Type	Number of Drivers	Logic Voltage - VIL, VIH	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package
Infineon Technologies IRS2301SPBF	Half-Bridge	Surface Mount	600 V	Non-Inverting	130 ns	50 ns	150 °C	-40 °C	IGBT N-Channel MOSFET	5 V	20 V	Independent	2	0.8 V 2.5 V	8-SOIC	3.9 mm	0.154 in	8-SOIC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources

No documents available