TSB772CK B0G

Taiwan Semiconductor Corporation

TRANS PNP 30V 3A TO126

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Taiwan Semiconductor Corporation

TRANS PNP 30V 3A TO126

Technical Specifications

Parameters and characteristics for this part

Specification	TSB772CK B0G

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	10 W
Supplier Device Package	TO-126
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package	Operating Temperature	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]
Taiwan Semiconductor Corporation TSB772CK B0G	TO-126-3 TO-225AA	1 µA	10 W	30 V	Through Hole	TO-126	150 °C	PNP	100	500 mV	3 A
Taiwan Semiconductor Corporation TSB772CK C0G	TO-126-3 TO-225AA	1 µA	10 W	30 V	Through Hole	TO-126	150 °C	PNP	100	500 mV	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	5000	$ 0.13

General part information

Bipolar (BJT) Transistor PNP 30 V 3 A 80MHz 10 W Through Hole TO-126

Technical documentation and resources