IXFE23N100

Obsolete

IXYS

MOSFET N-CH 1000V 21A SOT227B

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Obsolete

IXYS

MOSFET N-CH 1000V 21A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFE23N100

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	430 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology
IXYS IXFE23N100	430 mOhm	Chassis Mount	1000 V	500 W	-55 °C	150 °C	10 V	5 V	7000 pF	N-Channel	SOT-227-4 miniBLOC	20 V	SOT-227B	21 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 21A (Tc) 500W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available