Specification	SIHG33N60E-GE3

Current - Continuous Drain (Id) (Tc)	33 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	150 nC
Input Capacitance (Ciss) (Max)	3508 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AC
Power Dissipation (Max)	278 W
Rds On (Max)	99 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHG E Series

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Rds On (Max)	Package / Case	Mounting Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package Name
Vishay Dale SIHG33N60E-GE3	600 V	278 W	-55 °C	150 °C	MOSFET (Metal Oxide)	150 nC	3508 pF	30 V	99 mOhm	TO-247-3	Through Hole	4 V	33 A	10 V	N-Channel	TO-247AC
Vishay Dale SIHG64N65E-GE3	650 V	520 W	-55 °C	150 °C	MOSFET (Metal Oxide)	369 nC	7497 pF	30 V	47 mOhm	TO-247-3	Through Hole	4 V	64 A	10 V	N-Channel	TO-247AC
Vishay Dale SIHG33N60E-E3	600 V	278 W	-55 °C	150 °C	MOSFET (Metal Oxide)	150 nC	3508 pF	30 V	99 mOhm	TO-247-3	Through Hole	4 V	33 A	10 V	N-Channel	TO-247AC
Vishay Dale SIHG24N65E-E3	650 V	250 W	-55 °C	150 °C	MOSFET (Metal Oxide)	122 nC 122 nC	2740 pF	30 V	145 mOhm	TO-247-3	Through Hole	4 V	24 A	10 V	N-Channel	TO-247AC

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