Specification	SIZ980DT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	8.1 nC, 35 nC
Input Capacitance (Ciss) (Max)	4600 pF, 930 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	6 mm
Package Name	8-PowerPair®
Package Width	5 mm
Power - Max (Value 1)	20 W
Power - Max (Value 2)	66 W
Rds On (Max)	6.7 mOhm, 1.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.2 V

SIZ980 Series

Part	Package / Case	Vgs(th) (Max)	Configuration - Features	Configuration	Channel Count	Power - Max (Value 1)	Power - Max (Value 2)	Current - Continuous Drain (Id) (Tc)	Technology	Rds On (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Package Name	Package Width	Package Length	Current - Continuous Drain (Id) (Ta) (2)	Current - Continuous Drain (Id) (Tc) (2)	Current - Continuous Drain (Id) (Ta)	Power - Max (Ta)	Power - Max (Tc)
Vishay Dale SIZ980DT-T1-GE3	8-PowerWDFN	2.2 V	Dual	N-Channel	2	20 W	66 W	20 A	MOSFET (Metal Oxide)	1.6 mOhm 6.7 mOhm	30 V	-55 °C	150 °C	8.1 nC 35 nC	Surface Mount	930 pF 4600 pF	8-PowerPair®	5 mm	6 mm
Vishay Dale SIZ980BDT-T1-GE3	8-PowerWDFN	2.2 V	Dual	N-Channel	2			54.8 A	MOSFET (Metal Oxide)	1.06 mOhm 4.39 mOhm	30 V	-55 °C	150 °C	18 nC 79 nC	Surface Mount	790 pF	8-PowerPair®	5 mm	6 mm	54.3 A	197 A	23.7 A	3.8 W 5 W	20 W 66 W

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