2SC5084-O(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ SMINI

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Obsolete

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5084-O(TE85L,F)

Current - Collector (Ic) (Max) [Max]	80 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	7 GHz
Gain	11 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.1 dB
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Supplier Device Package	S-Mini
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

Part	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Operating Temperature	Gain	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Noise Figure (dB Typ @ f)
Toshiba Semiconductor and Storage 2SC5084-O(TE85L,F)	12 V	SC-59 SOT-23-3 TO-236-3	125 ¯C	11 dB	S-Mini	80	Surface Mount	NPN	7 GHz	80 mA	1.1 dB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount S-Mini

Technical documentation and resources

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