Specification	SI7463DP-T1-E3

Current - Continuous Drain (Id) (Ta)	11 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	140 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	9.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI7463 Series

Part	Rds On (Max)	Drain to Source Voltage (Vdss)	Package / Case	Technology	Package Name	Power Dissipation (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	FET Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SI7463DP-T1-GE3	9.2 mOhm	40 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	PowerPAK® SO-8	1.9 W	140 nC	11 A	20 V	Surface Mount	10 V	4.5 V	-55 °C	150 °C	3 V	P-Channel
Vishay Dale SI7463DP-T1-E3	9.2 mOhm	40 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	PowerPAK® SO-8	1.9 W	140 nC	11 A	20 V	Surface Mount	10 V	4.5 V	-55 °C	150 °C	3 V	P-Channel
Vishay Dale SI7463ADP-T1-GE3	10 mOhm	40 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	PowerPAK® SO-8	5 W 39 W	144 nC 144 nC		20 V	Surface Mount	10 V	4.5 V	-55 °C	150 °C	2.3 V	P-Channel	4150 pF	46 A

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