Specification	SI9407BDY-T1-GE3

Current - Continuous Drain (Id) (Tc)	4.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.4 W, 5 W
Rds On (Max)	120 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI9407 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Technology	Package Length	Package Name	Package Width	Mounting Type	Vgs (Max)	FET Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Gate Charge (Max)	Rds On (Max)
Vishay Dale SI9407BDY-T1-GE3	10 V	4.5 V	600 pF	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	Surface Mount	20 V	P-Channel	3 V	4.7 A	60 V	-55 °C	150 °C	2.4 W 5 W	22 nC	120 mOhm
Vishay Dale SI9407BDY-T1-E3	10 V	4.5 V	600 pF	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	Surface Mount	20 V	P-Channel	3 V	4.7 A	60 V	-55 °C	150 °C	5 W	22 nC	120 mOhm

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