Specification	WNSC401200CWQ

Capacitance	810 pF
Current - Average Rectified (Io)	40 A
Current - Reverse Leakage	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	1.75 V

WNSC4 Series

Part	Voltage - DC Reverse (Vr) (Max)	Current - Reverse Leakage	Technology	Package / Case	Capacitance	Voltage - Forward (Vf) (Max)	Operating Temperature - Junction (Max)	Mounting Type	Current - Average Rectified (Io)	Package Name	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Reverse Recovery Time (trr)
WeEn Semiconductors WNSC401200CWQ	1200 V	200 µA	SiC (Silicon Carbide) Schottky	TO-247-3	810 pF	1.75 V	175 °C	Through Hole	40 A	TO-247-3	500 mA	No Recovery Time	500 mA 500 mA	0 ns

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