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IR21364STRPBF

IR21364STRPBF

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INFINEON

EICEDRIVER™ 600 V THREE PHASE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 28W PACKAGE AND WORKS WITH IGBTS. FEATURES: ENABLE, FAULT REPORTING, OVER-CURRENT PROTECTION (ITRIP), SEPARATE PIN FOR LOGIC GROUND, SHOOT THROUGH PROTECTION

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IR21364STRPBF

IR21364STRPBF

Active
INFINEON

EICEDRIVER™ 600 V THREE PHASE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 28W PACKAGE AND WORKS WITH IGBTS. FEATURES: ENABLE, FAULT REPORTING, OVER-CURRENT PROTECTION (ITRIP), SEPARATE PIN FOR LOGIC GROUND, SHOOT THROUGH PROTECTION

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Description

General part information

IR21364 Series

600 Vthree phase gate driver ICforIGBTsandMOSFETswith typical 0.2 A source and 0.35 A sink current, 10.4 V/9.4 V UVLO, 500 ns/530 ns propagation delay, and 0.46 VITRIPpositive going threshold (VITRIP) in SOIC-28 wide body package with junction-isolated level-shift technology. For improved negative transient voltage robustness up to -100 V, integrated bootstrap diode (BSD), and 50% lower level shift losses, please check our Infineon SOI 600 V three phase gate driver6EDL04I06PT,6EDL04I06NT,6EDL04N06PT. Or6EDL04N02PRwhich is a 200 V, 3-phase gate driver available in TSSOP-28 package。

Technical Specifications

Parameters and characteristics for this part

SpecificationIR21364STRPBF
Channel Type3-Phase
Current - Peak Output (Sink)0.35 A
Current - Peak Output (Source)200 mA
Driven ConfigurationHalf-Bridge
Fall Time (Typ)50 ns
Gate ChannelN-Channel
Gate TypeIGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)600 V
Input TypeNon-Inverting
Logic Voltage - VIH2.5 V
Logic Voltage - VIL0.8 V
Mounting TypeSurface Mount
Number of Drivers6
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package Length0.295 in
Package Name28-SOIC
Package Width7.5 mm
Rise Time (Typ)125 ns
Voltage - Supply (Maximum)20 V
Voltage - Supply (Minimum)11.5 V

Pricing

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CAD

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