Specification	SUD20N10-66L-GE3

Current - Continuous Drain (Id) (Tc)	16.9 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	860 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252
Power Dissipation (Max)	2.1 W, 41.7 W
Rds On (Max)	66 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SUD20 Series

Part	Package / Case	Technology	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Package Name	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SUD20N10-66L-BE3	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	TO-252AA	30 nC	2.1 W 41.7 W	66 mOhm	20 V	860 pF	Surface Mount	16.9 A	10 V	4.5 V	3 V	100 V
Vishay Dale SUD20N10-66L-GE3	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	TO-252	30 nC	2.1 W 41.7 W	66 mOhm	20 V	860 pF	Surface Mount	16.9 A	10 V	4.5 V	3 V	100 V

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