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Description

General part information

HMC327 Series

The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.ApplicationsWireless Local Loop

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC327MS8GE
Current - Supply250 mA
Frequency (Max)4 GHz
Frequency (Min)3 GHz
Gain21 dB
Mounting TypeSurface Mount
Noise Figure5 dB
P1dB27 dBm
Package FeaturesExposed Pad
Package Length0.118 in
Package Name8-MSOP-EP, 8-MSOP, 8-TSSOP
Package Width3 mm
RF TypeWLAN, WLL
Test Frequency3.5 GHz
Voltage - Supply5 VDC

Pricing

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CAD

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