Specification	IPB34CN10NGATMA1

Current - Continuous Drain (Id) (Tc)	27 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24 nC, 24 nC
Input Capacitance (Ciss) (Max)	1570 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	58 W
Rds On (Max)	34 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPB34C Series

Part	Package Name	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Technology	Vgs(th) (Max)	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Package / Case	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)
INFINEON IPB34CN10NGATMA1	PG-TO263-3	27 A	24 nC 24 nC	N-Channel	100 V	1570 pF	MOSFET (Metal Oxide)	4 V	58 W	Surface Mount	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	34 mOhm	10 V	-55 °C	175 °C

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