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TK58E06N1,S1X

TK58E06N1,S1X

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Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0054 Ω@10V, TO-220, U-MOSⅧ-H

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TK58E06N1,S1X

TK58E06N1,S1X

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0054 Ω@10V, TO-220, U-MOSⅧ-H

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Description

General part information

TK58E06N1 Series

12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0054 Ω@10V, TO-220, U-MOSⅧ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTK58E06N1,S1X
Current - Continuous Drain (Id) (Ta)58 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)46 nC
Input Capacitance (Ciss) (Max)3400 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)110 W
Rds On (Max)5.4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TK58E06N1,S1X | Datasheet
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Structures and Characteristics: Power MOSFET Application Notes
MOSFET Self-Turn-On Phenomenon
Avalanche energy calculation
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
TK58E06N1 Data sheet/Japanese
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
RC Snubbers for Step-Down Converters
Motor Control (Vacuum Cleaners)
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
MOSFET SPICE model grade
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Electrical Characteristics: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Simplified CFD Model Application Note
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Calculating the Temperature of Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Maximum Ratings: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
MOSFET Secondary Breakdown
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes