681-1D, 1N, 1P

Active

Microsemi Corporation

DIODE MODULE GP 100V 15A ND

Search across all available documentation for this part.

Active

Microsemi Corporation

DIODE MODULE GP 100V 15A ND

Technical Specifications

Parameters and characteristics for this part

Specification	681-1D, 1N, 1P

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Series Connection
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	ND
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	ND
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.2 V

Part	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Diode Configuration	Supplier Device Package	Mounting Type	Current - Average Rectified (Io) (per Diode)
Microsemi Corporation 681-1D, 1N, 1P	ND	1.2 V	10 µA	100 V	Standard Recovery >500ns	200 mA	150 °C	-65 C	Standard	1 Pair Series Connection	ND	Chassis Mount	15 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Series Connection 100 V 15A Chassis Mount ND

Technical documentation and resources

No documents available