AOTF5B60D

Alpha & Omega Semiconductor Inc.

IGBT 600V 10A 31.2W TO220F

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Alpha & Omega Semiconductor Inc.

IGBT 600V 10A 31.2W TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF5B60D

Current - Collector (Ic) (Max) [Max]	14 A
Current - Collector Pulsed (Icm)	20 A
Gate Charge	9.4 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	31.2 W
Reverse Recovery Time (trr)	98 ns
Supplier Device Package	TO-220F
Switching Energy	140 µJ, 40 µJ
Td (on/off) @ 25°C	12 ns, 83 ns
Test Condition	400 V, 5 A, 15 V, 60 Ohm
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Package / Case	Td (on/off) @ 25°C	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Test Condition	Power - Max [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max) [Max]
Alpha & Omega Semiconductor Inc. AOTF5B60D	TO-220-3 Full Pack	12 ns 83 ns	9.4 nC	-55 °C	150 °C	20 A	98 ns	1.8 V	14 A	TO-220F	600 V	40 µJ 140 µJ	5 A 15 V 60 Ohm 400 V	31.2 W	Through Hole
Alpha & Omega Semiconductor Inc. AOTF5N50FD	TO-220-3 Full Pack			-55 °C	150 °C					TO-220F					Through Hole	530 pF	N-Channel	10 V	30 V	500 V	1.8 Ohm	5 A	MOSFET (Metal Oxide)	35 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.73