Specification	SI4501BDY-T1-GE3

Configuration	Common Drain, P-Channel, N
Current - Continuous Drain (Id) (Maximum)	8 A
Current - Continuous Drain (Id) (Typical)	12 A
Drain to Source Voltage (Vdss) (Option 1)	30 V
Drain to Source Voltage (Vdss) (Option 2)	8 V
FET Feature	Logic Level Gate
Gate Charge (Max)	25 nC
Input Capacitance (Ciss) (Max)	805 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max (Value 1)	4.5 W
Power - Max (Value 2)	3.1 W
Rds On (Max)	17 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2 V

SI4501 Series

Part	Mounting Type	FET Feature	Vgs(th) (Max)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Configuration	Technology	Package Length	Package Name	Package Width	Drain to Source Voltage (Vdss) (Option 1)	Drain to Source Voltage (Vdss) (Option 2)	Power - Max	Rds On (Max)	Power - Max (Value 2)	Power - Max (Value 1)	Input Capacitance (Ciss) (Max)
Vishay Dale SI4501ADY-T1-GE3	Surface Mount	Logic Level Gate	1.8 V	4.1 A	6.3 A	20 nC	-55 °C	150 °C	Common Drain N P-Channel	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	30 V	8 V	1.3 W	18 mOhm
Vishay Dale SI4501BDY-T1-GE3	Surface Mount	Logic Level Gate	2 V	8 A	12 A	25 nC	-55 °C	150 °C	Common Drain N P-Channel	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	30 V	8 V		17 mOhm	3.1 W	4.5 W	805 pF

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