Specification	SQ4080EY-T1_GE3

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	33 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1590 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SO
Package Width	3.9 mm
Power Dissipation (Max)	7.1 W
Qualification	AEC-Q101
Rds On (Max)	85 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SQ4080 Series

Part	Vgs (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Rds On (Max)	Package Length	Package Name	Package Width	Grade	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SQ4080EY-T1_GE3	20 V	MOSFET (Metal Oxide)	-55 °C	175 °C	Surface Mount	N-Channel	10 V	AEC-Q101	85 mOhm	0.154 in	8-SO 8-SOIC	3.9 mm	Automotive	4 V	1590 pF	7.1 W	33 nC	150 V	18 A

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