IPI70R950CEXKSA1

Obsolete

Infineon Technologies

CONSUMER

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Obsolete

Infineon Technologies

CONSUMER

Technical Specifications

Parameters and characteristics for this part

Specification	IPI70R950CEXKSA1

Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.3 nC
Input Capacitance (Ciss) (Max) @ Vds	328 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	950 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IPI70R950CEXKSA1	150 °C	-40 °C	20 V	N-Channel	328 pF	950 mOhm	700 V	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	3.5 V	68 W	MOSFET (Metal Oxide)	7.4 A	15.3 nC	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 700 V 7.4A (Tc) 68W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources