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GT30J121 - IGBTs, 600 V/30 A IGBT, TO-3P(N)

2SC5198-O(S1,E

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Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 140 V, 10 A, TO-3P(N)

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GT30J121 - IGBTs, 600 V/30 A IGBT, TO-3P(N)

2SC5198-O(S1,E

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 140 V, 10 A, TO-3P(N)

Find alt

Description

General part information

2SC5198 Series

Bipolar Transistors, NPN Bipolar Transistor, 140 V, 10 A, TO-3P(N)

Technical Specifications

Parameters and characteristics for this part

Specification2SC5198-O(S1,E
Current - Collector (Ic) (Max)10 A
Current - Collector Cutoff (Max)5 µA
DC Current Gain (hFE) (Min)55
Frequency - Transition30 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-3P-3, SC-65-3
Package NameTO-3P(N)
Power - Max100 VA
Transistor TypeNPN
Vce Saturation (Max)2 V
Voltage - Collector Emitter Breakdown (Max)140 V

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CAD

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