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TK56A12N1 - 12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0075 Ω@10V, TO-220SIS, U-MOSⅧ-H

TK3R2A10PL,S4X

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0032 Ω@10V, TO-220SIS, U-MOSⅨ-H

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TK56A12N1 - 12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0075 Ω@10V, TO-220SIS, U-MOSⅧ-H

TK3R2A10PL,S4X

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0032 Ω@10V, TO-220SIS, U-MOSⅨ-H

Find alt

Description

General part information

TK3R2A10PL Series

12V - 300V MOSFETs, N-ch MOSFET, 100 V, 0.0032 Ω@10V, TO-220SIS, U-MOSⅨ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTK3R2A10PL,S4X
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)161 nC
Input Capacitance (Ciss) (Max)9500 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220SIS
Power Dissipation (Max)54 W
Rds On (Max)3.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

RC Snubbers for Step-Down Converters
Derating of the MOSFET Safe Operating Area
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
TK3R2A10PL Data sheet/Japanese
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Electrical Characteristics: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET Self-Turn-On Phenomenon
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
TK3R2A10PL Data sheet/English
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Hints and Tips for Thermal Design part3
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Structures and Characteristics: Power MOSFET Application Notes
Simplified CFD Model Application Note
MOSFET SPICE model grade
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
MOSFET Secondary Breakdown
Maximum Ratings: Power MOSFET Application Notes
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Avalanche energy calculation
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Resonant Circuits and Soft Switching
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2