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INFINEON IPB60R060C7ATMA1

IPB60R120C7ATMA1

Obsolete
INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 120 MOHM; PRICE/PERFORMANCE

INFINEON IPB60R060C7ATMA1

IPB60R120C7ATMA1

Obsolete
INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 120 MOHM; PRICE/PERFORMANCE

Description

General part information

IPB60R120 Series

The600V CoolMOS™C7 superjunction (SJ) MOSFETseries offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB60R120C7ATMA1
Current - Continuous Drain (Id) (Tc)19 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)34 nC
Input Capacitance (Ciss) (Max)1500 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NamePG-TO263-3-2
Power Dissipation (Max)92 W
Rds On (Max)120 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part