Specification	IXFL38N100Q2

Current - Continuous Drain (Id) (Tc)	29 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	250 nC
Input Capacitance (Ciss) (Max)	13500 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-264-3, TO-264AA
Package Name	ISOPLUS264™
Power Dissipation (Max)	380 W
Rds On (Max)	280 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5.5 V

IXFL38 Series

Part	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package / Case	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	FET Type	Rds On (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)
LITTELFUSE IXFL38N100Q2	MOSFET (Metal Oxide)	30 V	1000 V	380 W	29 A	5.5 V	TO-264-3 TO-264AA	ISOPLUS264™	-55 °C	150 °C	250 nC	N-Channel	280 mOhm	Through Hole	10 V	13500 pF
LITTELFUSE IXFL38N100P	MOSFET (Metal Oxide)	30 V	1000 V	520 W	29 A	6.5 V	ISOPLUSi5-Pak™	ISOPLUSi5-Pak™	-55 °C	150 °C	350 nC	N-Channel	230 mOhm	Through Hole	10 V	24000 pF
LITTELFUSE IXFL38N100P	MOSFET (Metal Oxide)	30 V	1000 V	520 W	29 A	6.5 V	ISOPLUSi5-Pak™	ISOPLUSi5-Pak™	-55 °C	150 °C	350 nC	N-Channel	230 mOhm	Through Hole	10 V	24000 pF

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