LT1160IS#PBF

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Analog Devices Inc./Maxim Integrated

HALF-/FULL-BRIDGE N-CHANNEL POWER MOSFET DRIVERS

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LT1160IS#PBF

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Analog Devices Inc./Maxim Integrated

HALF-/FULL-BRIDGE N-CHANNEL POWER MOSFET DRIVERS

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Description Specifications Series Pricing CAD Documents

Description

General part information

LT1160 Series

The LT1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) rail of up to 60V.The internal logic prevents the inputs from turning on the power MOSFETs in a half-bridge at the same time. Its unique adaptive protection against shoot-through currents eliminates all matching requirements for the two MOSFETs. This greatly eases the design of high efficiency motor control and switching regulator systems.During low supply or start-up conditions, the undervoltage lockout actively pulls the driver outputs low to prevent the power MOSFETs from being partially turned on. The 0.5V hysteresis allows reliable operation even with slowly varying supplies.The LT1162 is a dual version of the LT1160 and is available in a 24-pin PDIP or in a 24-pin SO Wide package.ApplicationsPWM of High Current Inductive LoadsHalf-Bridge and Full-Bridge Motor ControlSynchronous Step-Down Switching Regulators3-Phase Brushless Motor DriveHigh Current Transducer DriversClass D Power Amplifiers

Technical Specifications

Parameters and characteristics for this part

Specification	LT1160IS#PBF

Channel Type	Independent
Current - Peak Output (Sink)	1.5 A
Current - Peak Output (Source)	1.5 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	60 ns
Gate Channel	N-Channel
Gate Type	MOSFET
High Side Voltage - Max (Bootstrap)	60 V
Input Type	Non-Inverting
Logic Voltage - VIH	2 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	14-SO, 14-SOIC
Package Width	3.9 mm
Rise Time (Typ)	130 ns
Voltage - Supply (Maximum)	15 V
Voltage - Supply (Minimum)	10 VDC

LT1160 Series

Part	Channel Type	Package Name	Package Width	Package Length	Gate Channel	Gate Type	High Side Voltage - Max (Bootstrap)	Fall Time (Typ)	Rise Time (Typ)	Input Type	Mounting Type	Operating Temperature (Max)	Operating Temperature (Min)	Logic Voltage - VIH	Logic Voltage - VIL	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Driven Configuration	Current - Peak Output (Sink)	Current - Peak Output (Source)	Number of Drivers
Analog Devices Inc./Maxim Integrated LT1160CS#PBF	Independent	14-SO 14-SOIC	3.9 mm	0.154 in	N-Channel	MOSFET N-Channel MOSFET	60 V	60 ns	130 ns	Non-Inverting	Surface Mount	125 °C	0 °C	2 V	0.8 V	10 VDC	15 V	Half-Bridge	1.5 A	1.5 A	2
Analog Devices Inc./Maxim Integrated LT1160IS#PBF	Independent	14-SO 14-SOIC	3.9 mm	0.154 in	N-Channel	MOSFET	60 V	60 ns	130 ns	Non-Inverting	Surface Mount	125 °C	-40 °C	2 V	0.8 V	10 VDC	15 V	Half-Bridge	1.5 A	1.5 A	2
Analog Devices Inc./Maxim Integrated LT1160IS#TRPBF	Independent	14-SO 14-SOIC	3.9 mm	0.154 in	N-Channel	MOSFET N-Channel MOSFET	60 V	60 ns	130 ns	Non-Inverting	Surface Mount	125 °C	-40 °C	2 V	0.8 V	10 VDC	15 V	Half-Bridge	1.5 A	1.5 A	2
Analog Devices Inc./Maxim Integrated LT1160CS#TRPBF	Independent	14-SO 14-SOIC	3.9 mm	0.154 in	N-Channel	MOSFET N-Channel MOSFET	60 V	60 ns	130 ns	Non-Inverting	Surface Mount	125 °C	0 °C	2 V	0.8 V	10 VDC	15 V	Half-Bridge	1.5 A	1.5 A	2
Analog Devices Inc./Maxim Integrated LT1160IN#PBF	Independent	14-DIP 14-PDIP	7.62 mm	0.3 in	N-Channel	MOSFET	60 V	60 ns	130 ns	Non-Inverting	Through Hole	125 °C	-40 °C	2 V	0.8 V	10 VDC	15 V	Half-Bridge	1.5 A	1.5 A	2
Analog Devices Inc./Maxim Integrated LT1160CN#PBF	Independent	14-DIP 14-PDIP	7.62 mm	0.3 in	N-Channel	MOSFET N-Channel MOSFET	60 V	60 ns	130 ns	Non-Inverting	Through Hole	125 °C	0 °C	2 V	0.8 V	10 VDC	15 V	Half-Bridge	1.5 A	1.5 A	2

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

R337 Reliability Data

LT1160IS#PBF | Datasheet